Reading memory elements within a crossbar array

ABSTRACT

A method for reading the state of a memory element within a crossbar memory array includes storing a first electric current sensed from a half-selected target memory element within the crossbar memory array; and outputting a final electric current based on the stored first electric current and a second electric current sensed from the target memory element when the target memory element is fully selected.

CROSS-REFERENCE TO RELATED APPLICATION

The present application is a divisional application of Ser. No.12/786,073, filed on May 24, 2010, now U.S. Pat. No. 8,647,253, issuedon 18 Jun. 2013, the contents of which are incorporated herein byreference.

STATEMENT OF GOVERNMENT INTEREST

This invention has been made with government support under Contract No.HR0011-09-3-0001, awarded by the Defense Advanced Research ProjectAgency. The government has certain rights in the invention.

BACKGROUND

As the use of digital data increases, the demand for faster, smaller,and more efficient memory structures used for storing that digital dataincreases. One type of memory structure which has recently beendeveloped is a crossbar memory structure. A crossbar memory structureincludes a set of upper parallel wires which intersect a set of lowerparallel wires. A programmable memory element is placed at theintersections between the upper and lower parallel lines. Theprogrammable memory element may store digital data.

One type of programmable memory element which may be used is amemristive element. A memristive element is a device which changes thestate of its resistance based on an applied programming condition. Forexample, a programming condition may be applied to change the memristiveelement from a high resistive state to a low resistive state or viceversa. A high resistive state may represent a digital “1” and a lowresistive state may represent a digital “0”.

One challenge that results from use of a crossbar memory structure isthe process of reading the state of a specific memory element. The stateof a memory element may be determined by applying a sensing conditionsuch as a sense voltage or a sense electric current. The behavior of thesensing condition when applied to a memory element may be indicative ofthe current state of that memory element. However, when applying sensingconditions in such a manner, the sensing condition will be adverselyaffected by other memory elements along the upper wire and along thelower wire to which the memory element to be read is connected. Thus, itis difficult to isolate the memory element to be read from other memoryelements within the crossbar array for the purpose of reading the stateof the memory element.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings illustrate various embodiments of theprinciples described herein and are a part of the specification. Theillustrated embodiments are merely examples and do not limit the scopeof the claims.

FIG. 1 is a diagram showing an illustrative crossbar array, according toone example of principles described herein.

FIG. 2 is a diagram showing an illustrative model of an N×N crossbararray, according to one example of principles described herein.

FIG. 3 is a diagram showing an illustrative Buffered Direct Injection(BDI) amplifier, according to one example of principles describedherein.

FIG. 4A is a diagram showing an illustrative sample and hold circuit insample mode, according to one example of principles described herein.

FIG. 4B is a diagram showing an illustrative sample and hold circuit inhold mode, according to one example of principles described herein.

FIG. 5 is a diagram showing an illustrative voltage to current relationof a non-linear element, according to one example of principlesdescribed herein.

FIG. 6 is a flowchart showing an illustrative method for sensing thestate of a memory element within a crossbar array, according to oneexample of principles described herein.

Throughout the drawings, identical reference numbers designate similar,but not necessarily identical, elements.

DETAILED DESCRIPTION

As mentioned above, one challenge that results from use of a crossbarmemory structure is the process of reading the state of a specificmemory element. The state of a memory element may be determined byapplying a sensing condition such as a sense voltage or a sense electriccurrent. The behavior of the sensing condition when applied to a memoryelement may be indicative of the current state of that memory element.However, when applying sensing conditions in such a manner, the sensingcondition will be adversely affected by other memory elements along theupper wire and lower wire to which the memory element to be read isconnected. Thus, it is difficult to isolate the desired memory elementfrom other memory elements within the crossbar array.

One solution has been to use isolation elements such as diodes andtransistors which may selectively inhibit the flow of electric currentfrom unselected memory elements. However, this approach requires the useof several additional electronic components for each memory element.Thus, the overall density of the memory array is decreased when usingsuch isolation elements.

In light of these and other issues, the present specification disclosesa method for accurately sensing the state of a target memory elementwithout the need of such isolation elements. For purposes ofillustration the two sets of intersecting parallel lines will bereferred to as row lines and column lines. Either the row or columnlines may be the upper or lower lines.

According to certain illustrative examples, a column line connected to atarget memory element is selected. By selecting the column line, everymemory element along the device becomes half-selected. The electriccurrent flowing through the selected column line at this point is aresult of bias voltages applied to the row lines intersecting theselected column line and is not indicative of the state of the targetmemory element. The electric current flowing from the selected columnline at this point is stored in a storage element such as a sample andhold circuit.

After storing the electric current flowing from the selected columnline, the target memory element may then be fully selected. To fullyselect the target memory element, a sense voltage is applied to the rowline connected to the target memory element. By applying the sensevoltage to the row line, all memory elements along that row line becomehalf-selected except for the target memory element which is now fullyselected. The electric current flowing from the column line is thenagain measured. The electric current measured and stored when the targetmemory element was only half-selected is then subtracted from theelectric current sensed while the target memory element is fullyselected. Thus, the ideal resulting final electric current value willinclude only the electric current from the target memory element.

A system or method embodying principles described herein allows thestate of memory elements within a crossbar memory structure to beaccurately read without the need of isolation elements. Thus, a memorystructure having a higher density may be realized. Additionally, thecost of designing, implementing, and manufacturing such a memorystructure may be reduced.

In the following description, for purposes of explanation, numerousspecific details are set forth in order to provide a thoroughunderstanding of the present systems and methods. It will be apparent,however, to one skilled in the art that the present apparatus, systemsand methods may be practiced without these specific details. Referencein the specification to “an embodiment,” “an example” or similarlanguage means that a particular feature, structure, or characteristicdescribed in connection with the embodiment or example is included in atleast that one embodiment, but not necessarily in other embodiments. Thevarious instances of the phrase “in one embodiment” or similar phrasesin various places in the specification are not necessarily all referringto the same embodiment.

Throughout this specification and in the appended claims, the term“memory structure” is to be broadly interpreted as the physicalstructure of an electronic circuit designed to store digital data. Amemory structure may include a number of programmable devices configuredto be set to a number of different states.

Throughout this specification and in the appended claims, the term“crossbar array” is to be broadly interpreted as a number of lower wiresegments configured to intersect a number of upper wire segments. Aprogrammable logic device is disposed at each crosspoint between anupper wire segment and a lower wire segment.

Throughout this specification and in the appended claims, the term“memory element” is to be broadly interpreted as a component configuredto be programmed with a value or state and maintain that value or stateto be read at a later time.

Throughout this specification and in the appended claims, the terms “rowlines” and “column lines” are used to differentiate between a first setof parallel lines intersecting a second set of parallel lines. Eitherthe row or column lines may be the upper set of lines in any particularapplication.

Referring now to the figures, FIG. 1 is a diagram showing anillustrative crossbar memory architecture (100). According to certainillustrative examples, the crossbar architecture (100) may include anupper set of lines (102) which may generally be in parallel.Additionally, a lower set of lines (104) may be generally perpendicularto and intersect the upper lines (102). Programmable memory devices(106) are formed at the intersections between an upper line (108) and alower line (110).

According to certain illustrative examples, the programmable memorydevices (106) may be memristive devices. Memristive devices exhibit a“memory” of past electrical conditions. For example, a memristive devicemay include a matrix material which contains mobile dopants. Thesedopants can be moved within a matrix to dynamically alter the electricaloperation of an electrical device.

The motion of dopants can be induced by the application of a programmingcondition such as an applied electrical voltage across a suitablematrix. The programming voltage generates a relatively high electricalfield through the memristive matrix and alters the distribution ofdopants. After removal of the electrical field, the location andcharacteristics of the dopants remain stable until the application ofanother programming electrical field. For example, by changing thedopant configurations within a memristive matrix, the electricalresistance of the device may be altered. The memristive device is readby applying a lower reading voltage which allows the internal electricalresistance of the memristive device to be sensed but does not generate ahigh enough electrical field to cause significant dopant motion.Consequently, the state of the memristive device may remain stable overlong time periods and through multiple read cycles.

According to certain illustrative examples, the crossbar architecture(100) may be used to form a non-volatile memory array. Non-volatilememory has the characteristic of not losing its contents when no poweris being supplied. Each of the programmable memory devices (106) is usedto represent one or more bits of data. Although individual crossbarlines (108, 110) in FIG. 1 are shown with rectangular cross sections,crossbars may also have square, circular, elliptical, or more complexcross sections. The lines may also have many different widths,diameters, aspect ratios and/or eccentricities. The crossbars may benanowires, sub-microscale wires, microscale wires, or wires with largerdimensions.

According to certain illustrative examples, the crossbar architecture(100) may be integrated into a Complimentary Metal-Oxide-Semiconductor(CMOS) circuit or other conventional computer circuitry. Each individualwire segment may be connected to the CMOS circuitry by a via (112). Thevia (112) may be embodied as an electrically conductive path through thevarious substrate materials used in manufacturing the crossbararchitecture. This CMOS circuitry can provide additional functionalityto the memristive device such as input/output functions, buffering,logic, configuration, or other functionality. Multiple crossbar arrayscan be formed over the CMOS circuitry to create a multilayer circuit.

FIG. 2 is a diagram showing an illustrative model of an N×N crossbararray (200). Although a practical crossbar array may include a 512×512array, a simpler 2×2 array is shown for purposes of this discussion tomore simply illustrate the principles of reading the state of memoryelements within the array. It will be apparent to those skilled in therelevant art that the principles described below for the 2×2 model (200)may be applied to any practical array size.

According to one illustrative example, a target memory element (208) isselected by selecting a column line (202) connected to the target memoryelement (208) and selecting a row line (204) connected to the targetmemory element (208). A row line or column line may be selected bysetting a select switch (212) attached to the row or column to an ONstate. When a switch is in an ON state, electric current is allowed toflow through the switch. When a column line (202) becomes selected, aread voltage (238) forms on the selected column line (202).

Although many different switching devices may be used, the switchingdevice shown in FIG. 2 is a Metal Oxide Semiconductor Field EffectTransistor (MOSFET) device. A MOSFET device either allows or inhibitsthe flow of electric current between the drain terminal and the sourceterminal depending on the signal received at the gate terminal. In thepresent configuration, the source terminal is connected to the upperline (202) and the drain terminal is connected to a sense element (216).The gate terminal may be connected to addressing circuitry used toselect a particular memory element.

As mentioned above, when a column line (202) is selected, all of thememory elements (234) along that selected column line (202), includingthe target memory element (208) become half-selected. When the columnline (202) becomes selected, an electric current will flow from thecolumn line (202), across the select switch (212) and to the senseelement (214). The electric current flowing from the column line may bereferred to as the sense current (214).

The sense current (214) flowing from the column line (202) while thetarget memory element (208) is half-selected is resulting in part fromany bias voltages (226) which are placed along the unselected row lines(210). The sense current (214) flowing from the column (202) line whilethe target memory element (208) is half-selected may also be affected bythe resistive state of various unselected memory elements (236) andhalf-selected memory elements (232, 234) within the array (200). Thesense current (214) flowing from the selected column line (202) whilethe target memory element (208) is half-selected is not relevant to theprocess of sensing the resistive state of the selected memory element(208). Thus, the electric current received while the memory element(208) is half-selected primarily includes what will be referred to as anoise current (230).

The magnitude of the noise current (230) is dependent upon the biasvoltage (226) applied to the unselected rows (210). Specifically, themagnitude of the noise current (230) is dependent on the differencebetween the bias voltage (226) applied to the unselected row lines (210)and the read voltage (238) formed on the selected column line (202).Additionally, the magnitude of the noise current (230) is dependent onthe equivalent resistance existing between the unselected row lines(210) and the selected column line (202). The bias voltages (226) areselected so that the noise current (230) is approximately equal to orless than the expected sense current (214). Reasons for this will bediscussed in more detail below.

The noise current (230) from the selected column line (202) while thetarget memory element (208) is half-selected may be sensed, or measured,by a sense element (216). The noise current (230) sensed by the senseelement (216) may be stored in a storage element (218). An example of asense element (216) circuit will be discussed below in the textassociated with FIG. 3. Likewise, an example of a storage element (218)circuit will be discussed below in the text associated with FIG. 4.

After the noise current (230) received from the selected column line(202) while the target memory element (208) is half-selected has beenstored in the storage element (218), the target memory element (208) maybe fully selected. The target memory element (208) becomes fullyselected by applying a sense voltage (224) to the row line (204)connected to the target memory element (208). Various switchingcircuitry may be used to apply or remove the sense voltage (224) to aparticular row line. By applying a sense voltage (224) to the selectedrow line (204) connected to the target memory element (208), a memoryelement current (228) will flow through the target memory element (208),through the select switch (212) and to the sense element (216). At thispoint, the sense current is a combination of the memory element current(228) and the noise current (230) which remains the same as when thetarget memory element (208) was only half-selected.

As mentioned above, it is desirable to read the electric current flowingthrough the selected memory element (208) that is a result of the sensevoltage (224) only. Because the sense current (214) flowing from theselected column line (202) includes both the noise current (230) and thememory element current (208), a summing node (220) may be used to removethe noise current (230) stored in the storage element (218) from thesense current (214) received from the selected column line (202) whenthe memory element (208) is fully selected. The resulting output current(222) will thus be equivalent to the memory element current (228) onlyand not from various other sources.

Based on the value of the sense voltage (224) and the final output(222), the resistive state of the selected memory element (208) may bedetermined. For example, if the final output current (222) is arelatively low electric value, it may be determined that the selectedmemory element is in a high resistive state. Conversely, if the finaloutput current (222) is a relatively high electric current value, thenit may be determined that the selected memory element is in a lowresistive state.

The summing node produces a more accurate output when the both of itsinputs are relatively equal. Thus, the noise current (230) ismanipulated to be roughly equal to the expected sense current (214)flowing from the selected column line (202) while the target memoryelement (208) is fully selected. As a result, the noise current (230)stored in the storage element (218) and the sense current (214) from thesense element (216) will be roughly equivalent. This produces a moreaccurate output current (222).

FIG. 3 is a diagram showing an illustrative Buffered Direct Injection(BDI) amplifier (300). According to certain illustrative examples, a BDIamplifier may be used to sense the electric current received from aselected line. The BDI amplifier (300) may include a transistor (306)and an amplifying element (304) such as an operational amplifier. TheBDI amplifier (300) is designed to accurately sense the electric currentfrom a selected column line without adversely affecting the read voltage(e.g. 238, FIG. 2) formed on the selected line.

In some examples, a control voltage (302) may be applied to the positiveinput terminal of the amplifying element (304). The control voltage maybe equivalent to the read voltage applied to the selected columnconnected to the target memory element (e.g. 208, FIG. 2). The negativeinput terminal of the amplifying element (304) may be connected to thedrain terminal of the select switch (e.g. 212, FIG. 2) as part of afeedback loop coming from the output terminal of the amplifying element.

In the present configuration, the output terminal of the amplifyingelement (304) is connected to the gate terminal (310) of the transistor(306). The sense current (308) received from a selected line may passthrough the transistor between the drain terminal (314) and the sourceterminal (312). The direction of the sense current is a matter ofconvention and may be based on the design implementation of the crossbarmemory structure. For example, whether the bias voltages and sensevoltages are positive or negative will affect the direction of theelectric current flowing from a selected line.

A supply voltage (316) may be applied to the drain terminal (314) of thetransistor (306). The measured electric current (318) may be readbetween the supply voltage (316) and the drain terminal (314). Asmentioned above, if the measured current (318) is the noise currentflowing from the selected column when the target memory element is onlyhalf-selected, then the measured current may be stored in a storageelement. One type of storage element is a sample and hold circuit.

FIGS. 4A and 4B are diagrams showing a sample and hold circuit (400) incorrelation with a current mirror. A sample and hold circuit (400) isconfigured to operate in two modes. When the sample and hold circuit isin a sample mode, the output of the circuit is designed to match theinput of the circuit. When the sample and hold circuit (400) is in ahold mode, the output is designed to output the value of the input atthe moment the circuit is switched to hold mode. The sample and holdcircuit (400) will ideally hold the same output value for the durationof the time in which the circuit is in hold mode.

FIG. 4A is a diagram showing an illustrative sample and hold circuit(400) in sample mode. The sample and hold circuit (400) may be in samplemode while a target memory element is only half-selected. While insample mode, the switch (404) between the gate terminal and the drainterminal will be closed. While closed, the transistor is in an ON stateand functions as a Metal Oxide Semiconductor (MOS) diode. Thus,electrical current is allowed to flow between the source terminal andthe drain terminal of the transistor (402). The noise current (412) mayflow from the supply voltage (414) and through the transistor (402). Asmall portion of the electric current may flow through the resistor(408). However, as appreciated by those skilled in the relevant art, thebulk of the electric current will flow along the path of leastresistance. Thus, the electric current flowing through the resistor isnegligible. As the noise current (412) is flowing through the transistor(402), a gate-to-source voltage is developed across the gate-to-sourcecapacitance of the transistor (402).

FIG. 4B is a diagram showing an illustrative sample and hold circuit(400) in hold mode. The sample and hold circuit (400) may be switched tohold mode before the target memory element is fully selected. With thetarget memory element fully selected, the sense current (416) includesthe noise current from the unselected memory elements as well as thememory element current from the selected target memory element. Toswitch to hold mode, the switch (404) between the gate terminal and thedrain terminal of the transistor (402) may be opened.

With the switch opened, a portion of the sense current (416) will travelthrough the resistor (408). The voltage stored in the gate-to-sourcecapacitance of the transistor will cause the drain current of thetransistor to be equal to the noise current. In accordance withKirchhoff's Current Law, the sense current (416) will be equal to thedrain current of the transistor plus the current flowing through theresistor.

Since the transistor drain current is limited to be equal to the noisecurrent and the current that must flow through the resistor (408) is thedifference between the sense current and the noise current (410), thecurrent through the resistor will be equal to the memory element current(228, FIG. 2). In this manner, the resistor (408) acts as a differentialcurrent sensor. The change in the voltage across the resistor will be ameasure of the memory element current. Thus, the current (410) flowingthrough the resistor will be the sense current minus the noise current.

If the selected target memory element is in a low resistive state, arelatively large current will flow through the resistor (408).Conversely, if the target memory element is in a high resistive state,then a relatively small amount of current will flow through the resistor(408). The amount of current flowing through the resistor at this pointis thus indicative of the resistive state of the selected target memoryelement.

The sense element and storage element examples illustrated in FIG. 3 andFIGS. 4A and 4B are merely one example of respective circuitconfigurations designed to carry out their described functions. As willbe appreciated by those skilled in the relevant art, many other circuitconfigurations may be designed to accomplish the same functions.

FIG. 5 is a graph (500) showing an illustrative voltage to currentrelation of a non-linear element. The horizontal axis of the graph (500)represents voltage (504) and the vertical axis of the graph (500)represents electric current (502). The non-linear element line (514)indicates the electric current (502) passing through a non-linearresistive element as a function of voltage (504).

According to certain illustrative examples, a voltage V (508) may beapplied to a non-linear element. A first electric current (510)illustrated by the upper horizontal dotted line is the electric currentvalue passing through the non-linear element with a voltage of V (508)applied. If half the voltage, V/2, (506) is applied, a second electriccurrent (512) illustrated by the lower horizontal dotted line will flowthrough the non-linear element. The second current (512) will be muchsmaller than half the first electric current (510) flowing through thenon-linear element when V (508) is applied. This non-linear relationshipallows bias voltages to be applied to unselected lines within thecrossbar array without overly affecting the electric current sensed froma selected memory element.

For example, if a sense voltage of V (504) is applied to a selected lineand a bias voltage of V/2 (506) is applied to unselected lines, thecumulative electric currents from several unselected lines may still beless than the electric current flowing through the selected memoryelement as a result of sense voltage V (508) being applied.

FIG. 6 is a flowchart showing an illustrative method (600) for sensingthe state of a memory element within a crossbar array. According tocertain illustrative examples, the method (600) may include selecting(step 602) a first wire segment from a first set of parallel wiresegments; storing (step 604) in a storage element, a sensed firstelectric current flowing from the selected first wire segment; selecting(step 606) a second wire segment from a second set of parallel wiresegments, the second set of parallel wire segments intersecting thefirst set of parallel wire segments, a memory element being positionedbetween an intersection between the first wire segment and the secondwire segment; measuring (step 608) a second electric current flowingfrom the selected first wire segment; and outputting (step 610) a finalelectric current based on the stored first electric current and thesecond electric current.

In sum, a system or method embodying principles described herein allowsthe state of memory elements within a crossbar memory structure to beaccurately read without the need of isolation elements. Thus, a memorystructure having a higher density may be realized. Additionally, thecost of designing, implementing, and manufacturing such a memorystructure may be reduced.

The preceding description has been presented only to illustrate anddescribe examples and examples of the principles described. Thisdescription is not intended to be exhaustive or to limit theseprinciples to any precise form disclosed. Many modifications andvariations are possible in light of the above teaching.

What is claimed is:
 1. A method for reading memory elements within acrossbar memory array, the method comprising: storing a first electriccurrent sensed from half-selected memory elements along a selectedcolumn line within said crossbar memory array, said first electriccondition resulting from bias voltages applied to at least one rowintersecting said selected column line; and selecting a target memoryelement connected to said selected column line by applying a sensevoltage to a row line connected to said target memory element; andoutputting a final electric current based on said stored first electriccurrent and a second electric current sensed from said target memoryelement with said sense voltage applied.
 2. The method of claim 1, inwhich said final electric current is a summation of said stored firstelectric current combined with said second electric current sensed fromsaid memory element when said memory element is fully selected.
 3. Themethod of claim 1, in which said final electric current isrepresentative of a digital value based on a comparison of said firstelectric current and said second electric current.
 4. The method ofclaim 1, in which said first electric current sensed from ahalf-selected memory element is stored with a sample and hold circuit.5. The method of claim 4, in which said sample and hold circuitcomprises a current mirror.
 6. The method of claim 1, in which saidmemory element is a non-linear memory element.
 7. The method of claim 1,in which at least one of said first electric current and said secondelectric current is sensed with a Buffered Direct Injection (BDI)amplifier.
 8. A method for reading the state of memory elements within acrossbar memory array, the method comprising: selecting a column linefrom a first set of parallel lines; storing in a storage element, asensed first electric current flowing from said selected column line,said first electric current resulting from a bias voltage applied to atleast one row line from a second set of parallel lines intersecting saidfirst set of parallel lines; selecting a row line from said second setof parallel lines, a target memory element being positioned between anintersection between said column line and said row line; measuring asecond electric current flowing from said selected row line; andoutputting a final electric current based on said stored first electriccurrent and said second electric current.
 9. The method of claim 8, inwhich said final electric current is a summation of said stored firstelectric current combined with said second electric current sensed fromsaid selected column line when said target memory element is fullyselected.
 10. The method of claim 8, in which said storage elementcomprises a sample and hold circuit.
 11. The method of claim 8, in whichsaid target memory element is a memristor.
 12. The method of claim 8, inwhich at least one of said first electric current and said secondelectric current is sensed with a Buffered Direct Injection (BDI)amplifier.